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Pockels Cells Laser laser

Pockels Cell

CRYLINK’s pockels cell use a protective window with a high-quality AR coating, ensuring a high transmission rate and prolonging the device’s service life.

By applying electric field control to the electro-optic crystal, the refractive index of the electro-optic crystal in a specific direction can be changed so that the electro-optic modulator pockels cell can be used as a variable half-wave plate to change the polarization state. When the pockels cell of the electro-optic modulator are placed between two vertical polarizers, the luminous intensity modulation can be realized. The electro-optic effect can be divided into the transverse and longitudinal electro-optic effects. In the transverse electro-optic effect, the propagation direction of light is perpendicular to the electric field, and the propagation direction of light in the longitudinal electro-optic effect is parallel to the electric field.

The half-wave voltage of the longitudinal electro-optic effect is independent of crystal size, so it is challenging to realize high-frequency electro-optic modulation. The working principle of BBO pockels cell is based on the transverse electro-optic effect. The half-wave voltage can be reduced by changing the size of BBO crystal. Crylink can provide BBO pockels cell with different aperture and lengths, adapting to different environments. Due to its low ringing effect and high laser-damaged threshold, the maximum frequency of Crylink’s BBO pockels cell can reach 1MHz.

Parameter

Product Model
Clear Aperture
(mm)
Shell Sizeλ/4Voltage
(@ 1064 nm),
kV DC
Capacitance,
pF
CLBBO-S02525-20352.2Dia. 20×35 mm2.4kV2.2pF
CLBBO-S02525-151728-S
2.2
15×17.5×28 mm
Square enclosure
2.4kV2.2pF
CLBBO-S0320-2035
2.7
Dia.20×35 mm3.6kV3pF
CLBBO-S0325-2035
2.7
Dia.20×35 mm2.9kV3pF
CLBBO-S0420-20353.7Dia.20×35 mm4.8kV4pF
CLBBO-S0425-20353.7Dia.20×35 mm3.9kV4pF

PS: Transmittance: >99%; Use wavelength: 1030 nm-1064 nm; Resist light damage,10ns 10Hz 1064 nm: 600MW/cm2; Extinction Ratio: 1000:1

Product Model
Clear Aperture
(mm)
Shell Sizeλ/4Voltage
(@ 1064 nm),
kV DC
Capacitance,
pF
CLBBO-D0320-20552.7Dia.20×55 mm1.8kV6pF
CLBBO-D0420-20553.7Dia.20×55 mm2.4kV7pF

PS: Transmittance: >99%; Use wavelength: 1030 nm-1064 nm; Resist light damage,10ns 10Hz 1064 nm: 600MW/cm2; Extinction Ratio: 500:1

Clear ApertureTo be confirmed
Transmittance>98%
Damage Threshold500MW/cm2@10ns 1064nm
Wavefront Distortion<λ/8 @1064nm
Typical Capacitance<3pF
Shell Sizeφ25.4×44mm
Quarter-wave Voltage3.4kv
Crystal StructureTrigonal,space group R3c,point group 3m
Lattice Constant

a=b=12.532Å,c=12.717Å,Z=6
Melting Point1095±5℃
Phase Transformation Point925±5℃
Optical Homogeneityδn~10-6cm
Mohs Hardness4
Density3.85g/cm3
HygroscopicityLow
Thermal Coefficient of Expansiona:4×10-6K,c:36×10-6K
Thermal Conductivity⊥C:1.2W/m/k , ∥C:1.6W/m/K
Absorption Coefficient<0.1%/cm @1064nm
Transparency Range189-3500nm
Refractive Index1064nm no=1.6545,ne=1.5392
800nm no=1.6606,ne=1.5444
532nm no=1.6742,ne=1.5547
400nm no=1.6930,ne=1.5679
Thermo-optical Coeffecientdno/dT=-9.3×10-6/℃
dne/dT=-16.6×10-6/℃
Electro-optic Coefficientγ11=2.7pm/V,γ2231<0.1γ11
Half-wave Voltage48KV @1064nm
NLO Coefficientd11=5.8×d36(KDP)
d31=0.05×d11
d22<0.05×d11
Phase Matching SH Wavelength189-3500nm

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