532/1064nm Laser (Nd:YAG)
CRYSTAL
LASER OPTICS
S1: ARs,p (0–10°, 808 nm) < 0.2 %
S2: HRs,p (0–10°, 1064 nm) > 99.95 % Rs,p (0–10°, 808 nm) < 2 %
(LIDT 6/ 30J/cm2; 1064 nm; 7 ns; Ø 270 μm)
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Ag + multilayer, HRs,p (22.5–45°, 1064 nm) > 99.7 %; (for application outside the resonator no transmission @VIS/NIR)
Ag + multilayer, HRs,p (22.5–45°, 532 nm) > 99.7 %; (for application outside the resonator no transmission @VIS/NIR)
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HRs,p (45°, 1064 nm) > 99.95 %; LIDT 6/ 50J/cm2; 1064 nm; 7 ns; Ø 270 μm)
HRs,p (45°, 532 nm) > 99.9 %; LIDT 6/ 10J/cm2; 532 nm; 7 ns; Ø 270 μm, 10Hz)
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S1: ARs,p (45°, 1064 nm) < 0.7 % ; | Rs – Rp | < 0.2 %
S2: PRs,p (45°, 1064 nm) = 50 (±3) %; | Rs – Rp | < 4 %
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S1: ARs,p (45°, 532 nm) < 0.7 % ; | Rs – Rp | < 0.2 %
S2: PRs,p (45°, 532 nm) = 50 (±3) %; | Rs – Rp | < 4 %
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S1: PRs,p (45°, 532 nm) = 50 (±3) %; | Rs – Rp | < 4 %
S2: HRs,p (45°, 1064 nm) ) > 99.9 % ; Rs,p (45°, 532 nm) < 3 %
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LASER EQUIPMENT
| Center Wavelength | Model | Clear Aperture | Polarizer | Extinction Ratio | Transmittance | Damage Threshold @10ns |
| 532nm | CL532-2.5-OI003 | 2.5mm | PBS Cube | ＞30dB | ＞90% | 3.5J/cm2 |
| CL532-5-OI004 | 5mm | PBS Cube | ＞30dB | ＞90% | 3.5J/cm2 | |
| 1064nm | CL1064-2.5-OI027 | 2.5mm | PBS Cube | ＞30dB | ＞90% | 5J/cm2 |
| CL1064-5-OI028 | 5mm | PBS Cube | ＞30dB | ＞90% | 5J/cm2 | |
| CL1064-8-OI029 | 8mm | PBS Cube | ＞30dB | ＞90% | 5J/cm2 | |
| CL1064-10-OI030 | 10mm | PBS Cube | ＞30dB | ＞90% | 5J/cm2 |
| Center Wavelength | Model | Clear Aperture | Rotation Angle | Extinction Ratio | Transmittance | Damage Threshold @10ns |
| 532nm | CL532-2.5-FP003 | 2.5mm | 45˚±1˚ | >30dB | ＞95% | 3.5J/cm2 |
| CL532-5-FP004 | 5mm | 45˚±1˚ | >30dB | ＞95% | 3.5J/cm2 | |
| 1064nm | CL1064-2.5-FP027 | 2.5mm | 45˚±1˚ | >30dB | ＞95% | 5J/cm2 |
| CL1064-5-FP028 | 5mm | 45˚±1˚ | >30dB | ＞95% | 5J/cm2 | |
| CL1064-8-FP029 | 8mm | 45˚±1˚ | >30dB | ＞95% | 5J/cm2 | |
| CL1064-10-FP030 | 10mm | 45˚±1˚ | >30dB | ＞95% | 5J/cm2 |
Laser (MCC Series)
MCC series microchip laser products have very ideal narrow pulse width, but also can achieve high single pulse energy. The product is a passive Q-switched solid-state laser based on semiconductor pump. The laser pulse is pure and tailless, the single pulse energy is stable, and the beam quality is good. The integrated design of semiconductor pump module and laser crystal makes the compact laser head easy to install and integrate. The system supports internal and external triggering. This series of products include four wavelengths of 1064nm, 532nm, 355nm and 266nm. The full sealing module inside the laser head can be used by customers for secondary development and application. The superior product performance index makes its application range very wide, especially in laser measurement, which can meet many different kinds of measurement needs, and also has excellent performance in the application of laser seeds.
| Model | Repetition Frequency (kHz) | Average Powe (mW) | Output Energy (uJ) | Power Stability (8h) |
| CL532-100Hz-250μJ-MCC010 | 0.1* | 25 | 250 | ±3% |
| CL532-500Hz-150μJ-MCC011 | 0.5* | 75 | 150 | ±3% |
| CL532-1KHz-40μJ-MCC012 | 1 | 40 | 40 | ±3% |
| CL532-5KHz-35μJ-MCC013 | 5 | 175 | 35 | ±3% |
| CL532-10KHz-20μJ-MCC014 | 10 | 200 | 20 | ±3% |
| Model | Repetition Frequency (kHz) | Average Powe (mW) | Output Energy (uJ) | Power Stability (8h) |
| CL1064-100Hz-500μJ-MCC015 | 0.1* | 50 | 500 | ±3% |
| CL1064-500Hz-300μJ-MCC016 | 0.5* | 150 | 300 | ±3% |
| CL1064-1KHz-80μJ-MCC017 | 1 | 80 | 80 | ±3% |
| CL1064-5KHz-70μJ-MCC018 | 5 | 350 | 70 | ±3% |
| CL1064-10KHz-40μJ-MCC019 | 10 | 400 | 40 | ±3% |
MOPA Laser System
High energy laser with 100 picosecond pulse width used in picosecond laser beauty instruments crushes pigment particles quickly, softly and painlessly. Crylink can provide picosecond laser cosmetic system solutions and high-quality application accessories for medical and aesthetic manufacturers what can help customers to reduce the instruments cost effectively as well as to ease the use of laser cosmetic system solutions and to expand market share.
| Model | CL-LMC-300 | CL-LMC-500 | CL-LMC-2000 | CL-LMC-300-L | CL-LMC-500-L | |||||
| Wavelength(nm) | 1064 | 532 | 1064 | 532 | 1064 | 532 | 1064 | 532 | 1064 | 532 |
| Pulse Width(pS) | 300 | 500 | 2000 | 300 | 500 | |||||
| Frequency (Hz) | 1-10 | |||||||||
| Energy (mJ) | 600 | 350 | 600 | 350 | 700 | 400 | 350 | 210 | 350 | 210 |
| RMS | 2% | 3% | 2% | 3% | 2% | 3% | 2% | 3% | 2% | 3% |
| Laser Dimensions (L×W×H mm) | 680 × 350 × 150 | 480 × 250 × 150 | ||||||||
| Size of Power Box (L× W × H mm) | 470 × 380 × 150 | 470 × 380 × 150 | ||||||||
- Multiple alternatives
- Multiple pulse width options
- High energy output
- Excellent spot pattern
- Flat top output
- High stability
- Melanin removal
- Tattoos removal
- Whitening and rejuvenating
- Color spots removal
- Skin moles removal
694nm Laser (Ruby)
CRYSTAL
LASER OPTICS
| Reflectance: R > 99.8 … R > 99.9 % at AOI = 0° (LIDT 800 MW / cm², 694 nm, 35 ns) | Reflectance: R > 99.5 % at AOI = 45° for unpolarlized light |
 Cavity Mirror |  Turning Mirror |
Precisely adjusted degree of reflectance by using sputtering technology;Easy combination with alignment beam (e.g. at 635 nm);
High performance and cost-optimized solutions with special designs.
 PRu (45°, 694 nm) = 99.0 % ± 0.3 % + Ru (45°, 633nm) < 35 % Reflectance spectrum |  Ru (45°, 630 – 640 nm) > 35 % + Rp (45°, 694 nm) < 0.3 %Reflectance spectrum
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Output couplers with precisely adjusted degree of reflectance.
 Reflectance spectrum PR (0°, 694 nm) = 20 % ± 2 % |
AR coatings for a single wavelength with a residual reflectance of R < 0.2 % on the back side of output couplers as well as on both sides of lenses and windows made of fused silica
 Reflectance spectrum AR (0°, 694 nm) < 0.2 %, |  Reflectance spectrum AR (0° – 30°, 694 nm) < 0.5 % |
R > 99 % at all three wavelengths (AOI = 45°,unpolarized light); High laser damage thresholds.
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755nm Laser (Alexandrite)
CRYSTAL
LASER OPTICS
| Reflectance: R > 99.8 … R > 99.9 % at AOI = 0° (LIDT 800 MW / cm², 694 nm, 35 ns) | Reflectance: R > 99.5 % at AOI = 45° for unpolarized light Easy combination with alignment beam (LIDT 800 MW / cm², 694 nm, 35 ns) |
 Cavity Mirror |  Turning Mirror |
| Output Coupler | Window & Lense |
 PR (0°, 755 nm) = 85 % ± 2 % |  AR (0° – 30°, 755 nm) < 0.5 % |
1550 Laser (Er,Cr,Yb:Glass)
CRYSTAL
LASER OPTICS
 HR(0°,1400-1700nm)>99.8%; unpol; Angle of incidence: 0°; |
S1: ARs,p(45°,900-1000nm)<0.6%
S2: HRs,p(45°,1500-1650nm)>99.8% + Rs,p(45°,900-990nm)<5%
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| S2 Reflectance spectrum | |
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| S1 Reflectance spectrum | |
2010nm Laser (Tm:YAG)
CRYSTAL
| Tm Concentration Tolerance (atm%) | Tm:0.5~5at% |
| Orientation | [111]，<5º |
| Diode Pump Band | 785nm, 680nm |
| Emission Cross Section@2013nm | 2.9×10-20 cm2 |
| Fluorescence Lifetime | 11ms |
LASER OPTICS
| HR(0°,1850-2200nm)>99.9%; unpol; Angle of incidence: 0° | R > 99.9 % for s-polarized light and R > 99.8 % for p-polarized light at AOI = 45° |
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| S1: AR (0°, 2010 – 2100 nm) < 0.25 % | S2: PR (0°, 2010 – 2100 nm) = 70 (±2) %,Fused Silica IR grade |
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| S1: AR (0°, 2010 – 2100 nm) < 0.25 % | S2: PR (0°, 2010 – 2100 nm) = 80 (±2) %,Fused Silica IR grade |
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| S1: AR (0°, 2010 – 2100 nm) < 0.25 % | S2: PR (0°, 2010 – 2100 nm) = 90 (±2) %,Fused Silica IR grade |
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S1: ARs.p (45°, 1 908 nm) < 0.6 %
S2: HRs,p (45°, 2090 nm) > 99.8 %, Rs,p (45°, 1908 nm) < 3%
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| Thin Film Polarizer 55° | GTI-Mirror 5°, -500 fs2 |
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| TFP (55°*, 2090 nm) Rs > 99.9 % Rp < 1 %; Fused Silica IR grade | HR (0 – 5°, 2010 – 2100 nm) > 99.9 %; GDD-R (0 – 5°, 2010 – 2100 nm) = -500 (±150) fs² |
2100nm Laser (Ho:YAG/ CTH:YAG)
CRYSTAL
LASER OPTICS
| HR(0°,1850-2200nm)>99.9%; unpol; Angle of incidence: 0° | R > 99.9 % for s-polarized light and R > 99.8 % for p-polarized light at AOI = 45° |
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| S1: AR (0°, 2010 – 2100 nm) < 0.25 % | S2: PR (0°, 2010 – 2100 nm) = 70 (±2) %,Fused Silica IR grade |
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| S1: AR (0°, 2010 – 2100 nm) < 0.25 % | S2: PR (0°, 2010 – 2100 nm) = 80 (±2) %,Fused Silica IR grade |
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| S1: AR (0°, 2010 – 2100 nm) < 0.25 % | S2: PR (0°, 2010 – 2100 nm) = 90 (±2) %,Fused Silica IR grade |
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S1: ARs.p (45°, 1 908 nm) < 0.6 %
S2: HRs,p (45°, 2090 nm) > 99.8 %, Rs,p (45°, 1908 nm) < 3%
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| Thin Film Polarizer 55° | GTI-Mirror 5°, -500 fs2 |
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| TFP (55°*, 2090 nm) Rs > 99.9 % Rp < 1 %; Fused Silica IR grade | HR (0 – 5°, 2010 – 2100 nm) > 99.9 %; GDD-R (0 – 5°, 2010 – 2100 nm) = -500 (±150) fs² |
2940nm Laser (Er:YAG)
CRYSTAL
| Laser Wavelength | 2940 nm (highly doped); 1645 nm (low doped) |
| Photon Energy | 6.75×10-20J@2940nm |
| Pump Absorption Band Width | 600~800 nm (highly doped); 1530 nm (low doped) |
| Damage Threshold | >500MW/cm2 |
| Emission Cross Section | 3×10-20 cm2 |
LASER OPTICS
| Laser Mirror | Components For Other Lasers Around 3μm |
 HR (0°, 2940 nm) > 99.8 %; unpol; Angle of incidence: 0°; Coated on Sapphire |  HR (0°, 2800 nm) > 99.7 %; Angle of incidence: 0° |
| Turning Mirror 45°, Red R > 95% （HRu (45°, 2940 nm) > 99.5%; Ru (45°, 635 – 655 nm) > 95%） | |
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| Turning Mirror 45°, Red R < 20% （HRu (45°, 2940 nm) > 99 %; Ru (45°, 635 – 655 nm) < 20 %；Coated on Sapphire） | |
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| Output Coupler 80 % | |
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| S1: AR (0°, 2940 nm) < 0.25 % | S2: PR (0°, 2940 nm) = 80 (±2) %,on Sapphire |
| Output Coupler 85 % | |
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| S1: AR (0°, 2940 nm) < 0.25 % | S2: PR (0°, 2940 nm) = 85 (±2) %,on Sapphire |
| Output Coupler 90 % | |
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| S1: AR (0°, 2940 nm) < 0.25 % | S2: PR (0°, 2940 nm) = 90 (±1) %,on Sapphire |
Laser
| Laser wavelength | 2940nm |
| Energy | 34mJ |
| Power | 3W |
| Focal Length Diameter | 0.15mm |
| Focusing Operation Method | single focus (7mm) |
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